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| BUZ 173 SIPMOS (R) Power Transistor * P channel * Enhancement mode * Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 173 VDS -200 V ID -3.6 A RDS(on) 1.5 Package TO-220 AB Ordering Code C67078-S1452-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -3.6 Unit A ID IDpuls -14 TC = 30 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 200 mJ ID = -3.6 A, VDD = -25 V, RGS = 25 L = 23 mH, Tj = 25 C Gate source voltage Power dissipation VGS Ptot 20 40 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 173 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -200 -3 -0.1 -10 -10 1.2 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 A VDS = -200 V, VGS = 0 V, Tj = 25 C VDS = -200 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS -100 nA 1.5 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -2.3 A Semiconductor Group 2 07/96 BUZ 173 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1.1 2.2 750 125 40 - S pF 1150 190 60 ns 20 30 VDS 2 * ID * RDS(on)max, ID = -2.3 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -2.6 A RGS = 50 Rise time tr 60 95 VDD = -30 V, VGS = -10 V, ID = -2.6 A RGS = 50 Turn-off delay time td(off) 70 90 VDD = -30 V, VGS = -10 V, ID = -2.6 A RGS = 50 Fall time tf 55 75 VDD = -30 V, VGS = -10 V, ID = -2.6 A RGS = 50 Semiconductor Group 3 07/96 BUZ 173 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A -1 200 0.75 -3.6 -14 V -1.3 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = -7.2 A Reverse recovery time VR = -30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 173 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS -10 V -3.8 A -3.2 45 W Ptot 35 30 ID -2.8 -2.4 25 20 15 10 5 0 0 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C -10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID -10 1 t = 5.6s p 10 s 100 s ZthJC 10 0 /I 10 -1 1 ms D =V DS D = 0.50 0.20 0.10 -10 0 R DS (o n) 10 ms 10 -2 0.05 0.02 single pulse 0.01 DC -10 -1 -10 0 -10 1 -10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 173 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -8.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 5.0 Ptot = 40W l kj i h g f VGS [V] a -4.0 A RDS (on) 4.0 3.5 3.0 2.5 2.0 a b c d e f ID -6.0 e b c -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -5.0 d e f -4.0 g dh i -3.0 c j g k -10.0 l -20.0 1.5 1.0 0.5 VGS [V] = a b c d e f -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -2.0 b h i kj l -1.0 a g h i j k l -7.0 -7.5 -8.0 -9.0 -10.0 -20.0 0.0 0 -4 -8 -12 -16 V -24 0.0 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 A -8.0 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max -8.0 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 4.0 S A ID -6.0 gfs 3.2 2.8 -5.0 2.4 2.0 1.6 1.2 -4.0 -3.0 -2.0 0.8 -1.0 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.4 0.0 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 VGS A ID -8.0 Semiconductor Group 6 07/96 BUZ 173 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -2.3 A, VGS = -10 V 5.5 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA -4.6 V -4.0 RDS (on) 4.5 4.0 98% VGS(th) -3.6 -3.2 typ 3.5 -2.8 3.0 2.5 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 2% 98% 2.0 typ 1.5 1.0 0.5 0.0 -60 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s -10 2 nF C 10 0 A IF -10 1 Ciss 10 -1 Coss -10 0 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 -10 -1 0.0 -5 -10 -15 -20 -25 -30 V VDS -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 07/96 BUZ 173 Avalanche energy EAS = (Tj ) parameter: ID = -3.6 A, VDD = -25 V RGS = 25 , L = 23 mH 220 mJ Drain-source breakdown voltage V(BR)DSS = (Tj) -240 V -230 V(BR)DSS -225 -220 -215 EAS 180 160 140 120 -210 100 -205 80 60 40 20 0 20 40 60 80 100 120 C 160 -200 -195 -190 -185 -180 -60 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 07/96 BUZ 173 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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